Strips of width near 40 nm created in PMMA resist

A. Firsov
Application Center for Microengineering, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, BESSY II, Berlin, Germany
Equipment: SEM LEO 1560, TSL laser interferometer controlled stage

Strips of width near 40 nm created in PMMA resist of 50 nm thickness for 25 kV accelerated voltage on balk Si substrate

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