Selective growth of single-walled carbon nanotubes and fabrication of devices on their base
Y. Kasumov et al.
IMT RAS1 and ISSP RAS2
, Chernogolovka, Russia
Equipment: SEM Zeiss EVO 50
The samples were fabricated as follows. At first, a Pt film with Cr underlayer was deposited by e-beam evaporation on oxidized
silicon wafer using photolithography mask to form contact pads and lanes. Then the wafer was cut up to obtain chips.
10 nm Al/1 nm Fe bilayer catalyst was selectively deposited by e-beam gun onto the chips using electron beam lithography and
a lift-off technique. After that the chips with deposited bilayer catalyst were heated in a furnace in air atmosphere for 2 min
in order to form Fe nanoparticles. Then the nanotubes were synthesized by single injection of acetylene CVD technique.
E-beam lithography with NanoMaker system and a lift-off process were used to pattern e-beam evaporation deposited Pd-Al electrodes contacting nanotubes.
General view of a sample. 8 nanotube SQUID prototypes.
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