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Selective growth of single-walled carbon nanotubes and fabrication of devices on their base

Y. Kasumov
IMT RAS1 and ISSP RAS2 , Chernogolovka, Russia
Equipment: SEM Zeiss EVO 50

The samples were fabricated as follows. At first, a Pt film with Cr underlayer was deposited by e-beam evaporation on oxidized silicon wafer using photolithography mask to form contact pads and lanes. Then the wafer was cut up to obtain chips. 10 nm Al/1 nm Fe bilayer catalyst was selectively deposited by e-beam gun onto the chips using electron beam lithography and a lift-off technique. After that the chips with deposited bilayer catalyst were heated in a furnace in air atmosphere for 2 min in order to form Fe nanoparticles. Then the nanotubes were synthesized by single injection of acetylene CVD technique. E-beam lithography with NanoMaker system and a lift-off process were used to pattern e-beam evaporation deposited Pd-Al electrodes contacting nanotubes.

Nanotube SQUID prototypes. Left nanotube (with 4 electrodes) was supposed to have 2 side-gates, not contacting the nanotube. But side gate contacted the nanotube due to a misalignment. Right nanotube is contacted with 2 electrodes. Substrate serves as a back-gate.

Selective growth of single-walled carbon nanotubes and fabrication of devices on their base
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More images from IMT RAS1 and ISSP RAS2
(Click on image for close view)
Selective growth of single-walled carbon...
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Selective growth of single-walled carbon...
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Selective growth of single-walled carbon...
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Selective growth of single-walled carbon...
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Selective growth of single-walled carbon...
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Selective growth of single-walled carbon...
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Selective growth of single-walled carbon...
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Selective growth of single-walled carbon...
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