"Deep" X-ray diffraction gratings based on Si (400) crystal
М. Knyazev, V. Starkov, D. Roshchupkin
IMT RAS
, Chernogolovka, Russia
Equipment: SEM Zeiss EVO 50
Diffraction grating is a profiled surface of Si wafer in the form of a square consisting of a set of parallel Si strips, separated by an air space. Overall size of the square is 400 x 400 um2. The depth of the grating is 2.5 um at period 1 um. Accordingly, the aspect ratio of the diffraction grating is ~ 5.
To create grating, first, a topological profile in resist was made using electron beam lithography. Then thin metal film of Cr was deposited on the surface. This film with the help of explosive lithography "lift-off" formed metal mask for subsequent etching. At final step, formation of the grid structure in the Si was carried out by reactive ion etching (ECR plasma).Top view of the Si X-ray diffraction grating with period of 1 um.
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