Given example demonstrates that NanoMaker allows one to perform exposure
of large area structures using cooperative control of stage and beam
deflection system for subfields stitching in automatic mode. As a test
structure the Bragg-Fresnel lens of 1+3+5 orders with overall sizes
of 1250 um x 180 um and minimal zone size of 200 nm has been chosen.
The job has been executed with microscope Zeiss SEM EVO-50 equipped
with a conventional mechanical stage, which accuracy of moving is worse
then 1 um. Exposure was carried out with stage moving over 200 micron
subfields along the horizontal axis. In each subfield, before the exposure,
an automatic alignment by using one marker was carried out to compensate
stage moving inaccuracy. To perform such procedure, on an initial Si
substrate the contrast metal markers in the form of crosses have been
created by optical lithography. Marker's centre to centre distance was
200 micron, while width of crosshair was nearby to 1.5 micron. The lens
has been written in PMMA-950 resist of 400 nm thickness at accelerating
voltage of 15 kV. After development, 100 nm Au film has been deposited
and lift-off has been performed. Evidently, from published below photos,
an accuracy of fields stitching was better than 100 nm. And
the limiting factor for the given procedure was quality of the markers
used for alignment.