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Proximity Parameters Recommended

Recommended Parameters

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Proximity Parameters Recommended applet view
Accuracy of proximity effect correction (and result of lithography) is very much dependent on accuracy of assigned proximity parameters. Assigning wrong parameters can even increase errors of e-beam lithography. That is why NanoMaker maintains the database of Recommended Parameters where recommended proximity parameters for most common types of substrate can be found.
Electron beam scattering schematic picture

The applet presents Alpha, Beta and Eta parameters of Proximity Function (see Fig.1) for Si or GaAs substrates and PMMA resist for different accelerated Voltages, resist thicknesses H0, and initial beam sizes Alpha0. Parameters interpolate experimental data [1]. Shareware NanoMaker-Editor version provides proximity parameters for more types of substrates.

Fig. 1: Fast electrons expose the resist layer twice entering the structure and leaving substrate. If exposure dose by entering electrons is taken 1 then the proximity parameter Eta characteraze exposure dose of backscattered electrons (electrons which leave the sunstrate).
0 – e-beam width when reaching resist,
– e-beam width when reaching substrate,
– e-beam width when leaving resist. It defines so called proximity distance and actually exposed area.

1. L.I.Aparshina, S.V.Dubonos, S.V.Maksimov, A.A.Svintsov, and S.I.Zaitsev. Energy dependence of proximity parameters investigated by fitting before measurement tests. J.Vac.Sci.Technol. B 15(6),Nov/Dec 1997 pp.2298-2302.

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